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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES * Low collector-emitter saturation voltage * High current capability * Improved device reliability due to reduced heat generation * Replacement for SOT89/SOT223 standard packaged transistor. APPLICATIONS * Supply line switching circuits * Battery management applications * DC/DC converter applications * Strobe flash units * Heavy duty battery powered equipment (motor and lamp drivers). handbook, halfpage PBSS5240T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -40 -2 -3 <220 UNIT V A A m 3 3 1 2 DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4240T. MARKING TYPE NUMBER PBSS5240T Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE(1) ZF* Top view 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. 2001 Oct 31 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN. PBSS5240T MAX. -40 -40 -5 -2 -3 -300 300 480 +150 150 +150 V V V A A UNIT mA mW mW C C C 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. VALUE 417 260 UNIT K/W K/W 2001 Oct 31 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IBEO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = -30 V; IE = 0 VEB = -4 V; IC = 0 VCE = -2 V IC = -100 mA IC = -500 mA IC = -1 A IC = -2 A VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -750 mA; IB = -15 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -200 mA RCEsat VBEsat VBEon Cc fT Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage collector capacitance transition frequency IC = -500 mA; IB = -50 mA; note 1 IC = -2 A; IB = -200 mA VCE = -2 V; IC = -100 mA VCB = -10 V; IE = Ie = 0; f = 1 MHz IC = -100 mA; VCE = -10 V; f = 100 MHz 300 260 210 100 - - - - - - - - - 100 450 350 290 180 -55 -70 -140 -140 -240 160 - - 23 200 - - VCB = -30 V; IE = 0; Tj = 150 C - MIN. - - - PBSS5240T TYP. MAX. -100 -50 -100 - - - - -100 -110 -225 -225 -350 <220 -1.1 -0.75 28 - UNIT nA A nA mV mV mV mV mV m V V pF MHz 2001 Oct 31 4 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T handbook, halfpage 1000 MHC064 handbook, halfpage hFE 800 (1) -1200 VBE (mV) -1000 -800 MHC067 (1) 600 -600 (2) (2) 400 -400 (3) (3) 200 -200 0 -10-1 -1 -10 -102 -103 -104 IC (mA) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = -2V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = -2V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. -103 handbook, halfpage VCEsat (mV) MHC068 handbook, halfpage -1200 VBEsat (V) -1000 MHC066 -102 (1) (2) (3) -800 (1) -600 -10 -400 (2) (3) -1 -10-1 -1 -10 -102 -103 -104 IC (mA) -200 -10-1 -1 -10 -102 -103 -104 IC (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2001 Oct 31 5 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T handbook, halfpage -3000 MHC065 IC (mA) -2000 (1) (2) (3) (4) 103 handbook, halfpage RCEsat () MHC069 (5) (6) (7) (8) 102 10 (9) -1000 (10) 1 (1) (2) (3) 0 0 -1 -2 -3 -4 -5 VCE (V) 10-1 -10-1 -1 -10 -102 -103 -104 IC (mA) (1) (2) (3) (4) IB = -23.0 mA. IB = -20.7 mA. IB = -18.4 mA. IB = -16.1 mA. (5) IB = -13.8 mA. (6) IB = -11.5 mA. (7) IB = -9.2 mA. (8) IB = -6.9 mA. (9) IB = -4.6 mA. (10) IB = -2.3 mA. IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2001 Oct 31 6 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS5240T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2001 Oct 31 7 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PBSS5240T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Oct 31 8 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor NOTES PBSS5240T 2001 Oct 31 9 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor NOTES PBSS5240T 2001 Oct 31 10 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor NOTES PBSS5240T 2001 Oct 31 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2001 Oct 31 Document order number: 9397 750 08382 |
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